Technology Description
This micro-LED device architecture utilizes quantum dot (QD) technology to simultaneously minimize UV leakage and leverage the photoluminescence of the QDs to improve color range and reduce power consumption. This enhances the quality of the display while reducing cost. Using available and inexpensive materials with established manufacturing methods, the device can achieve an enhancement factor of up to 7. The emissive layer of the device can also be free of cadmium, utilizing a variety of other nanomaterials.
Features & Benefits
Applications
Background of Invention
Micro-LED devices are emerging as a means to drive a new generation of display technology. Full-color micro-LEDs based on quantum dots (QDs) and UV micro-LEDs utilize the photoluminescence (PL) of UV-excited QDs to achieve large coverage of color gamut and low power consumption. There is high demand to develop cost-effective technologies to enhance QD emission and minimize UV light leakage through the QD layer. However, some technologies require significant processing or additional dielectric layers, reducing optical quality and increasing cost. This technology provides a cost effective means to address cost, efficiency, and UV leakage.
Status
Patent pending; seeking development partners