Solution Deposited Alumina Thin Films that Exhibit Fowler-Nordheim Tunneling

Summary

Technology Description

 

The technology described is a solution-processed Al2O3 thin film that is able to exhibit Fowler-Nordheim tunneling that is comparable to the Al2O3 thin films that are produced via atomic layer deposition (ALD), the current state of the art. The current work uses flat-Al13 [Al13(OH)24(H2O)24(NO3)15] clusters to prepare high quality thin films. The clusters used are of ultra-high purity Al-hydroxide and do not suffer the same consequences such as Frenkel-Poole conduction that is observed in lower purity solution precursors. Single-layer films can be spun-coat on a substrate, such as p-Si, from the as-prepared precursor solutions.

 

Features & Benefits

 

  • Cheaper than ALD
  • Reliable
  • Rapid on/off switching
  • Can be used in extreme temperature conditions

 

Applications

 

  • Flash memory
  • Optical Rectennas
  • NFC tags

 

Background of Invention

 

Current state of the art for Al2O3 thin film production involves using atomic layer deposition (ALD). This method is energy intensive and inefficient. Aqueous solution processing is a more efficient alternative that can be used to produce high quality thin film electronics. Currently, many of the components required for thin film electronics can be produced using this method. However, no method existed for Al2O3 thin films to be produced efficiently. Films produced from this solution-based method exhibit Fowler-Nordheim tunneling, which is necessary for several applications including optical rectennas for infrared energy harvesting and flash memory.

 

Status

 

Patent pending; seeking development partners

 

Patent Information:
Tech ID:
OSU-17-46
Contact:
David Dickson
IP & Licensing Manager
Oregon State University
541-737-3450
david.dickson@oregonstate.edu
Inventors:
Cory Perkins
Douglas Keszler
Keywords:
high performance electronics
quantum mechanical tunneling
solution processing
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