This technology is a deposition reactor and method that allows for the depositing of uniformly thick layers of thin film material. This is due to the uniform residence time of the fluid flowing through the deposition chamber regulated by the architecture of the deposition chamber. The device can control flow variations in the deposition chamber via an inlet for fluid comprising reactants or deposition material in fluid communication with the deposition chamber.
Features & Benefits
Background of Invention
Cadmium sulfide (CdS) is often used to form the core buffer layer component of a heterojunction photovoltaic (PV) cell. One step in production of thin film CdTe and CuInSe2 solar cells is the deposition of CdS as a thin film to serve as a “buffer layer” between the optically absorbent layer and the transparent conductive oxide (TCO) layer to complete an effective p-n junction. The preferred method is chemical bath deposition (CBD) due to its relative ease to implement, low temperature, atmospheric pressures, and low expense for covering large surface area devices. However, the typical CBD process utilizes a large volume of reaction fluid that is not in intimate contact with the substrate surface which provides conditions for spatially uniform film growth rates across substrate area but low yields of cadmium conversion to the final film due to precipitation of CdS in the bulk solution. Researchers at Oregon State University have developed a deposition reactor that compensates for lateral flow variation. With this device comes methods for uniformly depositing material layers, generally as thin films, on substrates.
This technology has been successfully tested in the laboratory and is ready for licensing. Published US Patent Application No. US 13/738,896